Visible light surface emitting laser device

Details Visible light surface emitting laser device Visible light surface emitting laser device

1991-10-21

1992-11-24

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

H01S 319

Patent

active

051669455

ABSTRACT:
A surface emitting laser device for producing visible light includes a GaAs substrate having a (100) oriented main surface; a double heterojunction structure disposed on the main surface and including a first conductivity type AlGaInP first cladding layer, an undoped GaInP active layer epitaxially grown on the first cladding layer under such conditions that a natural superlattice is formed, and an AlGaInP second cladding layer formed on the active layer and having a second conductivity type opposite the first conductivity type; a groove penetrating the substrate; and a first conductivity type region formed by diffusing dopant impurities in the substrate and the second cladding layer other than opposite the groove and not reaching the first cladding layer, the natural superlattice being disordered in the region. Therefore, a current confinement structure and a light confinement structure are realized in the active layer. As a result, a surface emitting laser device producing visible light that oscillates at a low threshold current with controlled transverse mode oscillations is realized.

REFERENCES:
patent: 4797890 (1989-01-01), Inaba et al.
patent: 5034954 (1991-07-01), Seiwa
patent: 5047366 (1991-09-01), Murakami
Gourley et al., "Visible, Room-Temperature, Surface-Emitting Laser Using an Epitaxial Fabry-Perot Resonator With AlGaAs/AsAs Quarter-Wave High Reflectors and AlGaAs/GaAs Multiple Quantum Wells", Applied Physics Letters, vol. 50, No. 18, May 1987, pp. 1225-1227.
Iga et al., "Room Temperature Pulsed Oscillation of GaAlAs/GaAs Surface Emitting Junction Laser Grown by MBE", Japanese Journal of Applied Physics, vol. 25, No. 6, Jun. 1986, pp. 924-925.

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