High density plasma chemical vapor deposition process

Details High density plasma chemical vapor deposition process High density plasma chemical vapor deposition process

1997-10-28

2000-09-12

Sergent, Rabon

Etching a substrate: processes

Forming or treating electrical conductor article

Forming or treating of groove or through hole

216 67, 216 75, 216 79, 216 80, 438695, 438710, H01L 21467, H01L 2132, H01L 21308, H01L 21762

Patent

active

061173452

ABSTRACT:
A method for depositing dielectric material into gaps between wiring lines in the formation of a semiconductor device includes the formation of a cap layer and the formation of gaps into which high density plasma chemical vapor deposition (HDPCVD) dielectric material is deposited. First and second antireflective coatings may be formed on the wiring line layer, the first and second antireflective coatings being made from different materials. Both antireflective coatings and the wiring line layer are etched through to form wiring lines separated by gaps. The gaps between wiring lines may be filled using high density plasma chemical vapor deposition.

REFERENCES:
patent: 5843836 (1998-12-01), Cheung et al.
patent: 5851899 (1998-12-01), Weigand
patent: 5858869 (1999-01-01), Chen et al.
patent: 5885894 (1999-03-01), Wu et al.
patent: 5913140 (1999-06-01), Roche et al.
J.T. Pye, et al., "High-Density Plasma CVD and CMP for 0.25-.mu.m Intermetal Dielectric Processing," Solid State Technology, Dec. 1995, pp. 65-69.

Affiliated with

Also associated with

Rating

High density plasma chemical vapor deposition process does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High density plasma chemical vapor deposition process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High density plasma chemical vapor deposition process will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-92615