Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Patent
1990-12-21
1992-11-24
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
257272, 257280, H01L 2702
Patent
active
051667681
ABSTRACT:
A compound semiconductor integrated circuit device has a region implanted with an impurity for forming a carrier capture level in an element isolating region in a semi-insulating compound semiconductor substrate. The region includes at least a first region of relatively low implantation concentration of the impurity and a second region of relatively high implantation concentration of the impurity.
REFERENCES:
patent: 4733283 (1988-03-01), Kuroda
patent: 4739379 (1988-04-01), Akagi et al.
patent: 4771324 (1988-09-01), Odani et al.
patent: 4956683 (1990-09-01), Quintana
Clauwaert et al, "Characterization Of Device Isolation In GaAs MESFET Circuits By Boron Implantation", Journal of Electrochemical Society, vol. 134, No. 3, 1987, pp. 711-714.
Ishizuka et al, "Active Area Limitation Of Ge/GaAs Heterojunctions By Means Of B Ion Implantation", Journal of Applied Physics, vol. 59, No. 2, 1986, pp. 495-497.
Short et al, "Implant Isolation Of GaAs", Journal of the Electrochemical Society, vol. 135, No. 11, 1988, pp. 2835-2840.
Hille Rolf
Loke Steven
Mitsubishi Denki & Kabushiki Kaisha
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