Patent
1988-01-05
1989-05-09
James, Andrew J.
357 16, 357 4, 357 30, 357 19, H01L 2980
Patent
active
048293466
ABSTRACT:
A field-effect transistor comprises a semi-insulating InP substrate, a strained buffer layer of Al.sub.X Ga.sub.1-X As grown on the substrate, and an active layer of GaAs. The active layer is eased in regard to the influence of the lattice mismatching between the active layer and substrate. Such a field-effect transistor is associated with an optical device in a monolithic manner on a common semi-insulating InP substrate.
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Shinohara, "Dislocation-Free GaAs Epitaxial Growth with the Use of Modulation-Doped AlAs-GaAs Superlattice Buffer Layers", Appl. Phys. Lett., 52(7), 15 Feb. 88, pp. 543-545.
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Inomoto Yasumasa
Itoh Tomohiro
Kasahara Kensuke
Suzuki Akira
Terakado Tomoji
James Andrew J.
Mintel William A.
NEC Corporation
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