Semiconductor Schottky barrier device with pn junctions

Details Semiconductor Schottky barrier device with pn junctions Semiconductor Schottky barrier device with pn junctions

1992-02-11

1992-11-24

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257475, 257477, 257927, 257928, 257262, H01L 2948

Patent

active

051667606

ABSTRACT:
A semiconductor device is provided wherein a first diode having a pn junction and a second diode having a combination of a Schottky barrier and a pn junction in a current-passing direction are provided side by side in a direction perpendicular to the current-passing direction. When a forward current with a current density J.sub.F is passed into the second diode, the relation ##EQU1## is established in a forward voltage V.sub.F range of 0.1 (V) to 0.3 (V), where k represents the Boltzmann constant (.apprxeq.1.38.times.10.sup.-23 J/K), T represents the absolute temperature, and q represents the quantity of electron charges (.apprxeq.1.6.times.10.sup.-19 C). The first diode can have a first semiconductor region of one conductivity type and a second semiconductor region of the other conductivity type adjacent to the first semiconductor region to form a pn junction therebetween, so as to be in ohmic contact with one main electrode, and so as to have an impurity concentration higher than that of the first semiconductor region. The second diode can be formed by the first semiconductor region of the one conductivity type and a third semiconductor region of the other conductivity type analogously as above.

REFERENCES:
Baciga et al., "The Merged P-I-N Schottky (MPS) Rectifier: A High-Voltage, High-Speed Power Diode", IEEE International Electron Devices Meeting, 1987, pp. 658-661.

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