Hot electron transistor

Details Hot electron transistor Hot electron transistor

1987-07-17

1989-05-09

Edlow, Martin H.

357 16, 357 61, H01L 2712

Patent

active

048293431

ABSTRACT:
An improved compound semiconductor hot electron transistor (HET) having room temperature current gain .beta.>10 is disclosed. Disclosed are also means by which improved HET performance can be obtained. Among these means is choice of the base layer material such that the hot electrons injected into the base have k.sub.i,2 /k.sub.i,1 >0.2, where k.sub.i,1 and k.sub.i,2 are the components of the electron wave vector respectively normal and parallel to the emitter/base interface. A further means is choice of collector material such that the hot electron velocity component normal to the base/collector interface remains relatively unchanged upon passage of the hot electron through the base/collector interface. For instance, an appropriate superlattice in the collector region may be used to achieve such matching. Causing quantization of the ambient charge carrier states in the base can reduce hot electron scattering in the base. In bipolar HETs such scattering can also be reduced if the effective heavy hole mass in the base is much larger (e.g.,.times.10) than the effective electron mass in the forward direction. A strained base layer may be used to achieve this.

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Electronics Letters, vol. 20(21), "Hot Electron Spectroscopy", by J. R. Hayes et al., pp. 851-852, Aug., 1984.
IEEE Proceedings, vol. 128(9), "Calculated Performance of Monolithic Hot-Electron Transistors", Aug., 1981, pp. 134-140.
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