Method of making implant programmable metal gate MOS read only m

Details Method of making implant programmable metal gate MOS read only m Method of making implant programmable metal gate MOS read only m

1979-01-08

1981-10-13

Weisstuch, Aaron

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 148 15, 357 91, H01L 21425

Patent

active

042940010

ABSTRACT:
An MOS read only memory or ROM is formed by a process compatible with standard P or N channel metal gate manufacturing methods. The ROM is programmed at a late stage of the process after the metal level of contacts and interconnections has been deposited and patterned. Address lines and gates are polysilicon with an overlying patterned metal layer and output and ground lines are defined by elongated heavily doped regions. Thin gate oxide is formed for every gate position, rather than for only the selected gates as in the prior standard programming method. Each potential MOS transistor in the array is programmed to be a logic "1" or "0" by ion implanting through the polysilicon gates where metal has been removed, using photoresist as a mask.

REFERENCES:
patent: 3914855 (1975-10-01), Cheney et al.
patent: 4059826 (1977-11-01), Rogers
patent: 4080718 (1978-03-01), Richman
patent: 4107548 (1978-08-01), Sakaba et al.
patent: 4208726 (1980-06-01), McElroy
patent: 4208780 (1980-06-01), Richman

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