Photoelectric element in a solid-state image pick-up device

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357 23, 357 30, 357 14, 357 24, H01L 2714

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041433890

ABSTRACT:
In a solid-state image pickup device having photoelectric elements each of which includes one or more switching MOS field-effect transistors and which are arrayed in one dimension or two dimensions on one semiconductor substrate, and scanning circuits which address the photoelectric devices time-sequentially, a transparent or semitransparent electrode is disposed over a light detecting region provided for the switching field-effect transistor, with an insulating oxide film intervening therebetween, whereby a capacitance is formed between the electrode and the substrate, charges generated under the electrode by photoexcitation are stored in a charge-storage region including the capacitance for a certain time, and the stored charges are taken out by the scanning circuits to a signal output line connecting the drains of the transistors in common.

REFERENCES:
patent: 3877057 (1975-04-01), Engeler
patent: 3877058 (1975-04-01), Cricchi
patent: 3906544 (1975-09-01), Engeler
patent: 3996658 (1976-12-01), Takei et al.
patent: 4060796 (1977-11-01), Togei et al.

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