Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1977-06-06

1979-03-06

Anagnos, Larry N.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307200B, 307279, 307283, 365159, 365184, 365185, 365228, G11C 1140

Patent

active

041432860

ABSTRACT:
A new type of nonvolatile static read/write memory cell constructed with one MOS transistor and one MNOS transistor (4) is disclosed. The MNOS transistor (4) and the MOS transistor (3) together with a load resistor are complementary combined to offer binary states in the .LAMBDA.-shaped I-V curve for memory operation under normal power supply. Upon power failure, the MNOS transistor (4) acts as a backing-up element for nonvolatility. By impressing a control pulse on the drain of the MNOS transistor (4) the MNOS transistor changes from the depletion mode to the enhancement mode, thereby storing the last memory contents before the power failure. The stored nonvolatile memory contents can be easily retrieved. Thus a small size static random access memory is provided. The new cell is characterized by advantageous features such as small cell size, simple peripheral circuit, operation with a unipolar power supply and low standby power consumption.

REFERENCES:
patent: 3968479 (1976-07-01), Goser
patent: 3975718 (1976-08-01), Goser
patent: 3989962 (1976-11-01), Tagaki et al.
patent: 4040082 (1977-08-01), Goser
patent: 4053798 (1977-10-01), Kolke et al.
Electronics, 4/18/74; pp. 52-53, "Negative Resistance Shown in Dual FET Device".
Tarui et al., "Electrically Reprogrammable Nonvolatile Seiconductor Memory"; IEEE-JSSC, vol. SC-7, No. 5 (10-1972); pp. 369-375.
Cricchi et al., "The Drain-Source Protected MNOS Memory Device and Endurance"; 1973 Int'l Electron Devices Meeting-Technical Digest; pp. 126-129.
Kaneko et al., "On a Novel Static Memory Using CMOS"; Institute of Electronics & Communication Engrs. of Japan; 1/17/74; pp. 19-28.

Affiliated with

Also associated with

Rating

Semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-922755