Semiconductor devices

Details Semiconductor devices Semiconductor devices

1975-01-22

1978-08-08

Wojciechowicz, Edward J.

357 59, H01L 2348

Patent

active

041060512

ABSTRACT:
A semiconductor device having an ohmic contact including a metal layer of molybdenum or tungsten on a first polycrystalline silicon layer, is provided with a second polycrystalline silicon layer on the metal layer, to prevent the subsequent oxidation of the metal layer.

REFERENCES:
patent: 3614547 (1971-10-01), May
patent: 3632436 (1972-01-01), Denning
patent: 3667008 (1972-05-01), Katnack
patent: 4042953 (1977-08-01), Hall

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