Method of manufacturing semiconductor silicon single crystal waf

Details Method of manufacturing semiconductor silicon single crystal waf Method of manufacturing semiconductor silicon single crystal waf

1999-04-13

2000-09-12

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 13, 117 32, C30B 1500

Patent

active

061172316

ABSTRACT:
A silicon wafer sliced from a silicon single crystal having a low oxygen concentration is used as an epitaxial substrate to provide semiconductor silicon single crystal wafers exhibiting good electrical characteristics at a low cost. A semiconductor silicon single crystal having a resistivity in a range of 0.005 to 0.02 .OMEGA..multidot.cm and an oxygen concentration of 12.times.10.sup.17 atoms/cm.sup.3 (ASTM'79) or less is manufactured by a Czochralski (CZ) method. The resulting silicon single crystal is shaped into a silicon single crystal substrate on which a silicon single crystal is epitaxially grown.

REFERENCES:
patent: 4659421 (1987-04-01), Jewett

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