Semiconductor device and method of manufacturing same

Details Semiconductor device and method of manufacturing same Semiconductor device and method of manufacturing same

1983-06-24

1988-08-09

Edlow, Martin H.

357 59, 357 2314, H01L 2934

Patent

active

047631856

ABSTRACT:
A semiconductor device comprises a semiconductor body having a surface provided with a first insulating layer. On this first insulating layer at least one pattern of conductor strips, coated with insulation strips having projecting edges, is provided. Under projecting edges of a second insulating layer, the conductor strips are coated with insulating tracks which fill the spaces under the edges and which at least at the area where they adjoin the first insulating layer can be selectively etched with respect to this layer. The conductor strips may be made of materials other than polycrystalline silicon, such as tungsten, molybdenum, and silicides of these metals. The thickness of the first insulating layer is affected to a very small extent during manufacture of the device, while its depth remains unchanged.

REFERENCES:
patent: 3691627 (1972-09-01), Engeler
patent: 4234362 (1980-11-01), Riseman
patent: 4466172 (1984-09-01), Batra

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