Method of manufacturing semiconductor device contact vias in lay

Fishing – trapping – and vermin destroying

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437 60, 437982, 437981, 437978, 437187, 437240, 148DIG136, H01L 21265

Patent

active

051660881

ABSTRACT:
A method of manufacturing a semiconductor device, includes the steps of: forming a first insulating layer (3), having at a surface thereof a concave area to which a contact hole is to be formed and a convex area, on a semiconductor substrate (7); forming a high resistance portion (4) including polycrystalline silicon, on the convex area; and forming a protection layer (2) including SiN on the first insulating layer and the high resistance portion. The method also includes the steps of: removing a portion of the formed protection layer at the concave area such that the removed portion includes an area to form the contact hole and is larger than the area to form the contact hole; and forming a second insulating layer (5) including at least boron as an impurity on the protection layer and the first insulating layer. The method further includes the steps of: forming the contact hole at the concave area from the second insulating layer to a surface of the semiconductor substrate by means of an etching technique; and forming a metal wiring (6) in the contact hole and on the second insulating layer.

REFERENCES:
patent: 5030588 (1991-07-01), Hosaka

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