Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1986-11-07

1988-08-09

James, Andrew J.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 45, 365174, 365182, H01L 2978

Patent

active

047631783

ABSTRACT:
A dynamic random access memory is disclosed which has memory cell units formed on a silicon substrate, each of which includes four memory cells, each of these including a MOS transistor and a MOS capacitor. One cell unit occupies a substantially square area of the surface of the substrate. The four memory cells included in this cell unit are arranged along the diagonal lines of the square area in the shape of a cross. The four transistors are connected to a common drain through a common drain region. The capacitors are respectively arranged at the four corners of the square area so as to have a relatively increased capacitor area, thereby obtaining a large capacitance.

REFERENCES:
patent: 4419682 (1983-12-01), Masuoka
Patents Abstracts of Japan, vol. 4, No. 75 (E-13) [557] May 31, 1980, p. 19 E 13.
IBM Technical Disclosure Bulletin, vol. 24, No. 7B, Dec. 1981, pp. 3815-3816, Armonk, N.Y., U.S.

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