Metal-semiconductor-metal schottky photodiode

Details Metal-semiconductor-metal schottky photodiode Metal-semiconductor-metal schottky photodiode

1987-01-07

1988-08-09

Edlow, Martin H.

357 30, 357 71, 357 67, H01L 2948, H01L 2714, H01L 2348

Patent

active

047631767

ABSTRACT:
A metal-semiconductor-metal photodiode comprises a semiconductor layer and a cathode electrode and an anode electrode which are formed on the semiconductor layer and are made of such mutually different electrode materials that the cathode electrode has a Schottky barrier height .phi..sub.bn from a conduction band satisfying .phi..sub.bn >Eg/2 and the anode electrode has a Schottky barrier height .phi..sub.bp from a valence band satisfying .phi..sub.bp >Eg/2, where Eg denotes the energy band gap.

REFERENCES:
patent: 3700980 (1972-11-01), Belasco et al.
patent: 4345107 (1982-08-01), Fulop et al.
patent: 4514579 (1985-04-01), Hanak
S. P. Murarka, "Refractory . . . Circuits", J. Vac. Sci. Tech., 17(4), Jul./Aug., 1980, pp. 775-792.

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