Semiconductor fuse structure

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

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Details

257208, 257209, 257528, H01L 4900, H01L 2702

Patent

active

053768205

ABSTRACT:
A semiconductor structure comprising a polysilicon pad, a metal pad separated from the polysilicon pad by an insulator, and a metal via connecting the pads. A fuse is formed at the intersection of the polysilicon pad and via.

REFERENCES:
patent: 4045310 (1977-08-01), Jones et al.
patent: 4651409 (1987-03-01), Ellsworth et al.
patent: 4692787 (1987-09-01), Possley et al.
patent: 4881114 (1989-11-01), Mohsen et al.
patent: 5081064 (1992-01-01), Inoue et al.

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