RC line

Details RC line RC line

1987-12-22

1989-09-12

Hille, Rolf

357 68, 357 59, H01L 2702, H01L 2348, H01L 2904

Patent

active

048665029

ABSTRACT:
The invention relates to RC lines which are used as components in filter synthesis, with resistors and capacitors not being arranged as discrete components alongside one another but as a three-layer structure consisting of two conductive polysilicon layers and an oxide layer located between these in superimposed relation on a semiconductor substrate. The two polysilicon layers form together with the oxide layer a distributed capacitor, with one conductive polysilicon layer constituting an ohmic resistor. The planar configuration of the polysilicon layers and the oxide layer results in parasitic ohmic resistors which impair the electrical properties of the RC line to a considerable extent. In accordance with the invention, these parasitic ohmic resistors are eliminated by both the two polysilicon layers and the oxide layer located between these being of a strip conductor-path-type structure, and by the three paths being folded or rolled in a space-saving manner parallel to the plane of the semiconductor substrate and lying in congruent superimposed relation to one another.

REFERENCES:
patent: 4285001 (1981-08-01), Gerzberg et al.
patent: 4399417 (1983-08-01), Ballantyne et al.
patent: 4560963 (1985-12-01), Sharpe
patent: 4620212 (1986-10-01), Ogasawara
Bhupendra K. Ahuja, "Implementation of Active Distributed RC Anti-Aliasing/Smoothing Filters", IEEE Journal of Solid-State Circuits, vol. SC-17, No. 6, Dec. 1982, pp. 1076-1080.
Dipl.-Ing. Gerhard Troster, "Analog Time-Continuous Filters in NMOS Technology", Progress Report of the Association of German Engineers, Series 9, 1984, pp. 110-119.
K. Setsune et al, "Hydrogenation for Polysilicon MOSFET's by Ion Shower Doping Technique", IEEE Electron Device Letters, vol. EDL-7, No. 11, Nov. 1986, pp. 618-620.

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