Integrated circuit with dissipative layer for photogenerated car

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357 42, 357 236, 357 237, 357 54, 357 59, 357 51, H01L 2714

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048664987

ABSTRACT:
The sensitivity of an integrated circuit to single-event upsets is decreased by providing a dissi

REFERENCES:
patent: 4314359 (1982-02-01), Kato et al.
patent: 4350993 (1982-09-01), Wieder
patent: 4495219 (1985-01-01), Kato et al.
patent: 4554570 (1975-11-01), Jastrzebski et al.
patent: 4580157 (1986-04-01), Honda
patent: 4590508 (1986-05-01), Hirakawa et al.
patent: 4593458 (1986-06-01), Adler
patent: 4604639 (1986-08-01), Kinoshita
patent: 4611386 (1986-09-01), Goto
No Author, "Method to fabricate CMOS on Insulator," IBM Technical Disclosure Bulletin, vol. 28, No. 7, Dec. 1985, pp. 3120-3122.
Anantha et al., "Process to Fabricate a Bipolar IC with Reduced Alpha Particle Damage, " IBM Technical Disclosure Bulletin, vol. 22, No. 12, May 80, 5365-5366.
Kamins et al., "Patterned Implanted Buried-Oxide Transistor Structures" J. Applied Physics, vol. 60, No. 1, Jul. 1, 1986, pp. 423-426.
Myers et al., "Characterization of Buried-Nitride Silicon for Integrated Circuit Applications", Materials Research Society Symp. Proc., vol. 93, Apr. 1987, pp. 11-117.
Schlesier et al., "CMOS Hardening Techniques," RCA Laboratories, 1973, pp. 225-281.
K. Schlesier & P. Morris, "CMOS Hardening Techniques", RCA Laboratories, 1973, pp. 275-281.
R. Donovan & M. Simons, "Radiation Hardening of Thermal Oxides On Silicon by Displacement Damage", J. Applied Physics, vol. 43, No. 6 Jun. 1972, pp. 2897-2899.
J. Tihanyi & H. Schlotterer, "Influence of the Floating Substrate Potential on the Characteristics of ESFI MOS Transistors", Solid-State Electronics, 1975, vol. 18, pp. 309-314.
M. Poponiak & T. Yeh, "Gettering Utilizing Implant Damage and Highly Disordered Epitaxial Layer", IBM Technical Disclosure Bulletin, vol. 19, No. 6, Nov. 1976, pp. 2052-2053.
J. Repace & A. Goodman, "The Effect of Process Variations On Interfacial and Radiation-Induced Charge in Silicon-On-Sapphire Capacitors", IEEE Transactions On Electron Devices, vol. ED-25, No. 8, Aug. 1978, pp. 978-982.
W. Ward, "Alpha Particle Shield", IBM Technical Disclosure Bulletin vol. 22, No. 4, Sep. 1979, p. 1398.
T. May & M. Woods, "Alpha-Particle-Induced Soft Errors In Dynamic Memories", IEEE Transactions On Electron Devices, vol. ED-26, No. 1 Jan. 1979, pp. 2-9.
L. Sivo et al., "Cosmic Ray-Induced Soft Errors In Static MOS Memory Cells", IEEE Transactions On Nuclear Science, vol. NS-26, No. 6, Dec. 1979, pp. 5042-5047.
S. Diehl et al. "Considerations For Single Event Immune VLSI Logic", IEEE Transactions on Nuclear Science, vol. NS-30, No. 6, Dec. 1983, pp. 4501-4507.
T. Mnich et al., "Comparison of Analytical Models and Experimental Results For Single Event Upset In CMOS SPRAMs", IEEE Transactions On Nuclear Science, vol. NS-30, No. 6, 12/83, pp. 4620-4623.
B. Tsaur et al., "Effects of Ionizing Radiation on SOI/CMOS Devices Fabricated In Zone-Melting-Recrystallized Si Films On SiO2", IEEE Electron Device Ltrs., vol. EDL-5, No. 7, 07/84, pp. 238-240.
G. Davis et al., "Transient Radiation Effects in SOI Memories", IEEE Transactions On Nuclear Science, vol. NS-32, No. 6, Dec. 1985, pp. 4432-4437.

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