Patent
1987-05-27
1989-09-12
Clawson, Jr., Joseph E.
357 238, 357 20, 357 52, 357 59, 357 38, H01L 2978
Patent
active
048664952
ABSTRACT:
A lateral conduction high power MOSFET chip with integrated control circuits in disclosed for high-side switching applications. A first surface field reduction region disposed between drain and source regions extends from the chip surface and into its body and has a charge density of about 1.times.10.sup.12 ions/cm.sup.2. A second surface field reduction region extends below the first region and the source and drain regions and has a charge density of from about 1.5.times.10.sup.12 to 2.0.times.10.sup.12 ions/cm.sup.2. A substrate extends below the second region and is isolated from both drain and source regions to enable the use of the device as a high-side switch.
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B. J. Baliga, "Modern Power Devices", John Wiley & Sons, New York (1987), pp. 350-353.
Clawson Jr. Joseph E.
International Rectifier Corporation
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