Coating processes – Electrical product produced – Condenser or capacitor
Patent
1978-03-20
1979-12-04
Smith, John D.
Coating processes
Electrical product produced
Condenser or capacitor
148186, 148188, 156605, 156DIG70, 427 87, 427124, 427250, 427376R, 427376L, H01L 2122, H01L 21203, H01L 21205
Patent
active
041772989
ABSTRACT:
A method for producing an InSb thin film element comprising the steps of forming an InSb polycrystalline thin film on a substrate, melting and recrystallizing the InSb polycrystalline thin film at a temperature above the melting point of InSb, and disposing a diffusion source which contains at least one element selected from the group consisting of Cu, Au, Ag, Zn, Na, K, Cd, B, Li, Ca, Fe, Mg, Ba, Al and Pb and then heating the InSb thin film so as to dope it with the desired element or elements in a range in which the total quantity does not exceed a concentration of 1.times.10.sup.18 cm.sup.-3. The InSb thin film element produced by this method has a very little current noise and a high signal-to-noise ratio. Further more, simultaneous doping of the said predetermined element or said elements and sb is more effective to reduce the current noise.
REFERENCES:
patent: 2938816 (1960-05-01), Gunther
patent: 3172778 (1965-03-01), Gunther et al.
patent: 3303067 (1967-02-01), Haering et al.
patent: 3341364 (1967-09-01), Collins
patent: 3554818 (1971-01-01), Lambert et al.
patent: 3591429 (1971-07-01), Clawson et al.
patent: 3600237 (1971-08-01), Davis et al.
patent: 3898359 (1975-08-01), Nadkarni
patent: 4080721 (1978-03-01), Hung
patent: 4128681 (1978-12-01), Kotera et al.
Kotera et al., "Electrical Properties of InSb Thin Films in Low Noise Hall Generators on a Ferrite Substrate", Thin Solid Films, vol. 36, 483-485 (1976).
Kotera Nobuo
Miyamoto Nobuo
Nakashima Muneyasu
Oi Tetsu
Shigeta Junji
Hitachi , Ltd.
Smith John D.
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