Planar, topology-free, single-mode, high-power semiconductor qua

Details Planar, topology-free, single-mode, high-power semiconductor qua Planar, topology-free, single-mode, high-power semiconductor qua

1993-10-15

1994-12-27

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

148DIG95, H01L 2120

Patent

active

053765826

ABSTRACT:
A planar, topology free, semiconductor quantum-well laser is described. The quantum-well active layer is formed and patterned in a specified region which is constrained on all sides by high bandgaps which are formed through the use of impurity-free diffusion techniques. After the impurity-free diffusion has taken place, an upper portion is then epitaxially deposited to complete the structure. High-power, single fundamental mode laser operation is achieved by funneling current into the constrained quantum-well active region, high bandgap regions in conjunction with low index of refraction in regions surrounding the active area.
The structure is further designed to allow low beam divergence in the direction perpendicular to the semiconductor laser junction.

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A. Behfar-Rad, et al., "Rectangular and L-shaped GaAs/AlGaAs Lasers with very high quality etched facets", Appl. Phys. Lettr, V. 54 (6) pp. 493-495, Feb 1989.
J. Y. Chi, et al., "Spatially selective modification of GaAs/AlGaAs quantum wells by SiO.sub.2 capping and rapid thermal annealing".
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M. C. Wu, et al., "A periodic index separate confinement heterostructure quantum well laser" Appl. Phys. Lett. V. 59 (9), pp. 1046-1048, Aug. 1991.

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