Method of forming a low resistive current path between a buried

Details Method of forming a low resistive current path between a buried Method of forming a low resistive current path between a buried

1994-06-30

1994-12-27

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 26, 437162, 437156, H01L 2170

Patent

active

053765770

ABSTRACT:
The present invention is a Static Random Access Memory fabrication process for forming a buried contact, by the steps of: patterning a photoresist layer over the field silicon dioxide regions and the spaced apart areas of the substrate, thereby providing a buried contact implant window to expose a portion of at least one spaced apart area and an adjacent field silicon dioxide end portion; implanting an N-type dopant through the buried implant contact window, the implant forming a first N-type diffusion region in the exposed spaced apart area and changing the etch rate of the exposed field silicon dioxide end portion; stripping the masking layer; growing a sacrificial silicon dioxide layer, over the field silicon dioxide regions and the spaced apart areas of the supporting silicon substrate, thereby annealing the exposed field silicon dioxide end portion and returning the etch rate of the exposed field silicon dioxide end portion to substantially the same etch rate as prior to the implantation step; stripping the sacrificial silicon dioxide layer; growing a gate silicon dioxide layer over the spaced apart areas; depositing a first polysilicon layer over the gate silicon dioxide layer; patterning a buried contact window in the first polysilicon layer, thereby exposing the first N-type diffusion region and re-exposing the field silicon dioxide end portion; depositing a second polysilicon layer superjacent the first polysilicon layer and patterning whereby the first polysilicon layer forms a gate over the gate and the second polysilicon layer makes direct contact to the first N-type diffusion region; wherein the dopants from the patterned doped polysilicon forms a second N-type diffusion region within the first N-type diffusion region.

REFERENCES:
patent: 4502894 (1985-03-01), Seto et al.
patent: 5278082 (1994-01-01), Kawamura
patent: 5290718 (1994-03-01), Fearson et al.
patent: 5292684 (1994-03-01), Chung et al.
patent: 5316965 (1994-05-01), Philipossian et al.

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