Method of manufacturing a lateral field effect transistor

Details Method of manufacturing a lateral field effect transistor Method of manufacturing a lateral field effect transistor

1993-12-27

1994-12-27

Fourson, George

Fishing, trapping, and vermin destroying

437 30, 437 41, 437 62, 148DIG12, H01L 21265

Patent

active

053765591

ABSTRACT:
A lateral insulating gate type field effect transistor can be manufactured with ease reliably by using a semiconductor substrate having excellent crystal property. A projected portion (2) is formed on a first major surface side of a semiconductor substrate (1). A first gate portion (3) having a width (length) smaller than that of the projected portion (2) is formed on the projected portion (2). An insulating layer (4) is formed on the whole surface of the semiconductor substrate (1) so as to bury the first gate portion (3). The semiconductor substrate (1) is removed horizontally from its second major surface side, i.e., from the opposite side of the side of the projected portion (2) to a position (a) at which the insulating layer (4) is formed so as to bury the projected portion (2) is exposed. A second gate portion (5) is formed on such exposed surface.

REFERENCES:
patent: 3445303 (1969-05-01), Engbert
patent: 4980308 (1990-12-01), Hayashi
patent: 5091330 (1992-02-01), Cambou et al.
patent: 5238865 (1993-08-01), Eguchi

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