Power semiconductor device with a gate withstand-voltage test te

Details Power semiconductor device with a gate withstand-voltage test te Power semiconductor device with a gate withstand-voltage test te

1994-06-22

1996-03-26

Nguyen, Vinh P.

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

G01R 3128

Patent

active

055023991

ABSTRACT:
A power semiconductor device comprises a MOSFET 32 having a gate oxide film 63 formed on a semiconductor substrate 51 and a gate voltage applying circuit 33 integrally formed on the semiconductor substrate 51. The gate voltage applying circuit 33 which includes Zener diode 41a converts a DC power source voltage into a constant gate driving voltage using the Zener diode 41a. The gate voltage applying circuit applies the gate driving voltage to a gate of MOSFET 32 in response to a gate trigger signal. A test mode setting terminal CHK is provided for setting a test mode-by which a test voltage higher than the gate driving voltage is applied to the gate of the MOSFET 32 in a gate withstand voltage test. A test-use Zener diode 41b is provided in the gate voltage applying circuit 33 and connected in series with Zener diode 41a. A switching transistor 42, connected in parallel with the test-use Zener diode 4b, responds to a signal given from the test mode setting terminal CHK to short-circuit test-use Zener diode 4b in a normal operating condition, the short-circuit condition of the test-use Zener diode 4b being released in a gate withstand voltage test condition so that the test voltage is applied to the gate of the MOSFET 32 in the gate withstand voltage test ,the test voltage being higher than the gate driving voltage.

REFERENCES:
patent: 4677317 (1987-06-01), Sakuma
patent: 4833395 (1989-05-01), Sasaki et al.
patent: 4928157 (1990-05-01), Matsunaga et al.

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