Method for making a non-single crystal insulated-gate field effe

Details Method for making a non-single crystal insulated-gate field effe Method for making a non-single crystal insulated-gate field effe

1986-08-13

1988-08-09

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 45, 437101, 437103, 437233, 437914, 148DIG1, 148DIG122, 148DIG148, 357 2, 357 234, 357 59, 357 238, 357 56, H01L 2978

Patent

active

047628073

ABSTRACT:
An insulated-gate field effect transistor (IGFET) having the structure of the source and drain disposed in the longitudinal direction, i.e., the laminating direction, so that the channel region extends in the lateral direction when a high voltage is applied. This structure prevents a high current density at the interface of the channel region and the gate insulation film, allowing the fabrication of a large-current power transistor or the integration of such transistors.

REFERENCES:
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patent: 4364167 (1982-12-01), Donley
patent: 4470060 (1984-09-01), Yamazaki
patent: 4543320 (1985-09-01), Vijan
patent: 4547789 (1985-10-01), Cannella et al.
patent: 4568958 (1986-02-01), Baliga
patent: 4620208 (1986-10-01), Fritzsche et al.
patent: 4633284 (1986-12-01), Hansell et al.
patent: 4633287 (1986-12-01), Yamazaki
patent: 4673957 (1987-06-01), Ovshinsky et al.

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