Process for producing a SiC semiconductor device

Fishing – trapping – and vermin destroying

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437911, 437912, 437913, H01L 29163, H01L 2904

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047628065

ABSTRACT:
A process for producing a SiC semiconductor device comprising growing a single-crystal film of SiC on a single-crystal substrate of Si and forming the structure of semiconductor device such as diodes, transistors, etc., on said SiC single-crystal film, thereby obtaining a SiC semiconductor device on a commercial scale.

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