Process for forming crystalline films by glow discharge

Details Process for forming crystalline films by glow discharge Process for forming crystalline films by glow discharge

1985-12-06

1988-08-09

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 87, 437967, 427 39, 136258, H01L 21365

Patent

active

047628030

ABSTRACT:
Crystalline silicon films are formed by exposing a film of amorphous silicon on a substrate to a glow discharge in the presence of an inert gas such as argon. Masks can be used to allow for selective crystallization of defined regions of the amorphous film.

REFERENCES:
patent: 4113532 (1978-09-01), Authier
patent: 4226898 (1980-10-01), Ovshinsky et al.
patent: 4392011 (1983-07-01), Panove et al.
patent: 4410558 (1983-10-01), Izu et al.
patent: 4492736 (1985-01-01), Tanner
Nakata et al. "Novel Low Temperature (.ltoreq.300.degree. C.) Annealing of Amorphous Si . . . ", Japanese J. Appl. Physics, vol. 21 (1982), pp. 211-216.
Miyao et al., "Electron Irradiation-Activated Low-Temperature Annealing of Phosphorus Implanted Silicon", Appl. Phys. Lett. 48 (17), Apr. 28, 1986, pp. 1132-1134.

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