Sublimation of silicon carbide to produce large, device quality

Details Sublimation of silicon carbide to produce large, device quality Sublimation of silicon carbide to produce large, device quality

1987-10-26

1989-09-12

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG21, 148DIG148, 156610, 156DIG64, 437 9, 437112, 437949, 437976, H01L 21205, H01L 2136

Patent

active

048660051

ABSTRACT:
The present invention is a method of forming large device quality single crystals of silicon carbide. The sublimation process is enhanced by maintaining a constant polytype composition in the source materials, selected size distribution in the source materials, by specific preparation of the growth surface of seed crystals, and by controlling the thermal gradient between the source materials and the seed crystal.

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