Fishing – trapping – and vermin destroying
Patent
1993-11-29
1996-03-26
Fourson, George
Fishing, trapping, and vermin destroying
437192, H01L 2144
Patent
active
055020054
ABSTRACT:
A production method of a semiconductor device which has a first insulator film formed directly or through at least one layer on a semiconductor substrate, a wiring film containing gold (Au) and formed on the first insulator film, a metal layer covering the surface of the wiring film, and a second insulator film formed on the metal layer to cover its surface. The metal layer is made through an absorption process or phenomenon of a metal included in the metal layer. Preferably, the metal layer is made of tungsten (W) or molybdenum (Mo) and the wiring film is made of a gold (Au) layer and at least one electroconductive layer stacked. An improved adhesion between the wiring layer and an insulator film formed thereon can be obtained.
REFERENCES:
patent: 3657029 (1972-04-01), Fuller
patent: 4970574 (1990-11-01), Tsunenari
"A Process for Two-Layer Gold IC Metallization", Solid State Technology, Doug Summers, Dec. 1983, Beaverton, Oregon, pp. 137-141.
"Multilevel Gold Metallization by use of Selective W-CVD and Polymide Siloxane Film", Proceedings of 6th IEEE V-MIC Conference, K. Mikagi et al., Jun. 12-13, 1989, pp. 33-39.
"Multilevel Gold Metallization", Proceedings of 5th IEEE V-MIC Conference, K. Haberle et al., Jun. 13-14, 1988, pp. 117-124.
Everhart C.
Fourson George
NEC Corporation
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