High-speed and high-density semiconductor memory

Details High-speed and high-density semiconductor memory High-speed and high-density semiconductor memory

1995-06-05

1998-09-15

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257296, H01L 2980

Patent

active

058083286

ABSTRACT:
A multiplicity of field effect type semiconductor memory elements are formed perpendicular to a surface of a semiconductor wafer. Charge carriers are transported in the semiconductor bulk perpendicular to the surface and a potential barrier is formed in the current path to accomplish storing. Since the bulk mobility of a semiconductor is far larger than the surface mobility, the transit time of the carriers is much improved. Furthermore, since each structure of the memory cells is formed perpendicular to the semiconductor surface, the surface occupation area per memory cell is reduced. Thus, a high-speed and high-density semiconductor memory device is provided.

REFERENCES:
patent: 3986180 (1976-10-01), Cade
patent: 4434433 (1984-02-01), Nishizawa
patent: 4994999 (1991-02-01), Nishizawa
patent: 5557119 (1996-09-01), Nishizawa
patent: 5585654 (1996-12-01), Nishizawa

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