Thin film transistor having transparent conductive film

Details Thin film transistor having transparent conductive film Thin film transistor having transparent conductive film

1996-12-19

1998-09-15

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 72, 349 43, H01L 2904

Patent

active

058083154

ABSTRACT:
According to a transparent conductive film forming method, after an ITO (Indium Tin Oxide) thin film is formed at room temperature by a sputtering method, an annealing treatment is conducted on the film under hydrogen atmosphere at a suitable temperature such as a temperature higher than 200.degree. C.

REFERENCES:
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patent: 5414278 (1995-05-01), Kobayashi et al.
patent: 5468987 (1995-11-01), Yamazaki et al.
patent: 5495353 (1996-02-01), Yamazaki et al.
patent: 5498573 (1996-03-01), Whetten
patent: 5500538 (1996-03-01), Yamazaki et al.
patent: 5644370 (1997-07-01), Miyawaki et al.

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