Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1996-08-30
1998-09-15
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 21, 257 22, 257 84, 257 85, 257 98, 257184, 359248, 372 48, 372 50, H01L 2715, H01L 3112, H01L 31153, H01L 3300
Patent
active
058083146
ABSTRACT:
The present invention relates to a semiconductor emission device with fast wavelength modulation and constituted by three sections, namely two lateral sections, each having an active layer and a DFB network and which produce an optical gain, connected across a central electroabsorbant section, to which is applied a reverse voltage making it possible to quasi-instantaneously modify the absorption rate in said section.
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Charil Josette
Nakajima Hisao
Slempkes Serge
France Telecom
Mintel William
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