Protection circuit for power FETs in a half-bridge circuit

Electricity: electrical systems and devices – Safety and protection of systems and devices – Voltage regulator protective circuits

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Details

361 86, 363 56, 363134, H02H 7122

Patent

active

051595150

ABSTRACT:
A small size FET has its drain connected to the gate of a high-side power FET of an N-channel half-bridge circuit and its gate connected to the gate of the low-side power FET of the half-bridge circuit. The source of the small FET is connected to ground. If both the high side and low side power FETs receive gate turn-on signals simultaneously, the protection FET turns on and pulls the gate of the high side FET to ground to turn it off. A layout of the FETs on leadframe segments is disclosed so that the small FET is physically adjacent to the two power FETs such that a very short distance exists between the power FETs and their connection points to the control FET.

REFERENCES:
patent: 4213103 (1980-07-01), Birt
patent: 4316243 (1982-02-01), Archer
patent: 4685040 (1987-08-01), Steigerwald et al.
patent: 4829415 (1989-05-01), Haferi
patent: 4970620 (1990-11-01), Cehnhoff

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