High-voltage semiconductor integrated circuit

Details High-voltage semiconductor integrated circuit High-voltage semiconductor integrated circuit

1974-02-26

1976-05-25

Larkins, William D.

357 38, 357 47, 357 50, 357 56, 357 59, H01L 29743, H01L 2704, H01L 2904, H01L 2906

Patent

active

039598128

ABSTRACT:
A high-voltage semiconductor integrated circuit consists of an N.sup.- -type substrate, a P.sup.+-type diffusion layer formed on the surface region of the substrate, an N.sup.+-type diffusion layer formed on the P.sup.+-type diffusion layer, and an N.sup.--type epitaxial layer formed on the substrate, forming a high voltage-proof transistor against voltage more than one thousand and several hundred volts. Also, an N.sup.- substrate (collector), N.sup.+-type diffusion layer, and N.sup.+-type diffusion layer, are integrated therewith to form a low-voltage-proof transistor, diode, and PNPN diode in the epitaxial layer so that the entire circuit may take the form of a high voltage-proof power component plus a low voltage-proof control circuit.

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Sack, Def. Pub. of Ser. No. 794,046 filed Jan. 1969, Def. Pub. No. T892,019.

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