Method for manufacturing a semiconductor device and the same

Details Method for manufacturing a semiconductor device and the same Method for manufacturing a semiconductor device and the same

1970-06-18

1976-05-25

Edlow, Martin H.

357 89, H01L 2934

Patent

active

039598101

ABSTRACT:
A method for manufacturing a PNP type planar transistor, diffusing an acceptor impurity in a non-oxidizing atmosphere to form a P type emitter region in one portion of an N type base region with a first silicon oxide film as a selective mask, depositing a second silicon oxide film from vapor phase on the surface of said emitter region, diffusing selectively a donor impurity in another portion of said base region with said first and second silicon oxide films as selective masks thereby to form an N type highly doped region in said base region.

REFERENCES:
patent: 3226611 (1965-12-01), Halnichen
patent: 3303069 (1967-02-01), Tokuyama
patent: 3338758 (1967-09-01), Tremere
patent: 3418181 (1968-12-01), Robinson

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