Semiconductor device package having improved sealing at the alum

Details Semiconductor device package having improved sealing at the alum Semiconductor device package having improved sealing at the alum

1992-05-04

1992-10-27

Hille, Rolf

357 73, H01L 2306, H01L 2310

Patent

active

051594323

ABSTRACT:
A semiconductor device package is disclosed, which comprises: a substrate of AlN with said semiconductor device affixed to it; a barrier layer of high melting point glass affixed to said substrate around said semiconductor device; a first layer of low melting point glass affixed to said barrier layer; a lead frame affixed to said first layer of low melting point glass and connected electrically to said semiconductor device; a second layer of said low melting point glass affixed to said lead frame on the opposite side from said first layer of low melting point glass; and a cap affixed to said second layer of low melting point glass. When the cap is of AlN, a second barrier layer of the high melting point glass is provided between the second layer of low melting point glass and the cap.

REFERENCES:
patent: 3697666 (1972-10-01), Wakley et al.
patent: 3768991 (1973-10-01), Rogers
patent: 4656499 (1987-04-01), Butt
patent: 4704626 (1987-11-01), Mahulikar et al.
Patent Abstracts of Japan, vol. 8, No. 206 Sep. 2, 1984.
Patent Abstracts of Japan, vol. 10, No. 347 Nov. 21, 1986.
Patent Abstracts of Japan, vol. 11, No. 231 Jul. 28, 1987.

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