Thin film transistor with aluminum contacts and nonaluminum meta

Details Thin film transistor with aluminum contacts and nonaluminum meta Thin film transistor with aluminum contacts and nonaluminum meta

1988-09-07

1989-08-08

Heyman, John S.

350334, 350333, 350336, H01L 2904

Patent

active

048558060

ABSTRACT:
A thin film FET switching element, particularly useful in liquid crystal displays, employs a set of special materials to ensure compatibility with the indium tin oxide of a pixel electrode layer used as transparent conductive material in liquid crystal display devices. These materials include the use of titanium as a gate electrode material and the use of aluminum as a material to enhance electrical contact between source and drain pads and an underlying layer of amorphous silicon. The apparatus and process of the present invention provide enhanced fabrication yield and device reliability.

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Kawai, Satoru et al., "A Self-Aligned Amorphous-Silicon TFT for LCD Panels", Fujitsu Sci. Tech. Journal, vol. 21, No. 2, pp. 204-210 (June 1985).
Chow, T. P. et al., "Plasma Etching of Refractory Gates for VLSI Applications", Journal of the Electrochemical Society, vol. 131, No. 10, Oct. 1984, pp. 2325-2335.
Wiley et al. "Amorphous Metallization for High Temperature Semiconductor Device Applications" IEEE Trans. on Ind. Elec. vol. IE-29, No. 2 May 1982.

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