Vertically integrated oxygen-implanted polysilicon resistor

Details Vertically integrated oxygen-implanted polysilicon resistor Vertically integrated oxygen-implanted polysilicon resistor

1991-07-24

1992-10-27

Mintel, William

357 59, 357 63, 357 58, H01L 2702, H01L 2904, H01L 29167, H01L 2912

Patent

active

051594307

ABSTRACT:
A method for fabricating a high value, vertically integrated resistor begins with an integrated circuit having an unpassivated upper surface that includes designated circuit nodes to be placed in series with the vertical resistor. A layer of passivating material such as boro-phospho silicate glass is deposited on the upper surface of the integrated circuit. Polysilicon vias are formed that extend through the passivating layer and form an electrical ohmic contact with each designated circuit node. The polysilicon vias are subsequently ion implanted with oxygen or nitrogen to increase the resistance thereof to the final desired resistance, which can be greater than 100 megohms, and as much as a gigohm or a terohm. Finally, the vertical resistor is contacted with a metal layer formed on the surface of the passivating layer.

REFERENCES:
patent: 4406051 (1983-09-01), Iizuka
patent: 4727045 (1988-02-01), Cheung et al.
"A Novel Scaled-Down Oxygen-Implanted Polysilicon Resistor for Future Static RAM's [sic: RAMs]", R. Saito, et al., IEEE Transactions on Electron Devices vol. 35, No. 3, pp. 298-301, Mar. 1988.
"Thyristors with Polysilicon Shunt Resistors", R. A. Duclos, et al., RCA Technical Notes, No. 1365, Mar. 21, 1985.
"Oxygen Implantation for Polysilicon TCR Optimization", C. H. Lee, IBM Technical Disclosure Bulletin, vol. 24, No. 4, Sep. 1981.
"Oxygen Effect on the Electrical Characteristics of Polycrystalline Silicon Films", R. Angelucci, et al., Appl. Phys. Lett., vol. 39, No. 4, Aug. 15, 1981.
"An Advanced MOS-IC Process Technology Using Local Oxidation of Oxygen-Doped Polysilicon Films", T. Yamaguchi, et al., IEEE Journal of Solid-State Circuits, vol. SC-13, No. 4, Aug. 1978.
"A Wide Range Linear Variable Resistor by Buried Channel MOS/SIMOX", M. Akiya, IEEE Journal of Solid-State Circuits, vol. SC-19, No. 4, Aug. 1984.

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