Patent
1988-06-03
1989-08-08
James, Andrew J.
357 2, 357 59, 357 63, 350336, H01L 2912
Patent
active
048558052
ABSTRACT:
The present invention provides a nonlinear semiconductor element which has a V-I characteristic of excellent origin symmetry and a liquid crystal display panel which employs such nonlinear semiconductor element. The nonlinear semiconductor has an n-i-n, n-i-p-i-n, or p-i-n-i-p type structure. The i-type semiconductor layer is intentionally doped with boron, which acts to make the i-type semiconductor layer more intrinsic.
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Inushima Takashi
Konuma Toshimitsu
Mase Akira
Miyazaki Minoru
Sakama Mitsunori
Crane Sara W.
Ferguson Jr. Gerald J.
James Andrew J.
Semiconductor Energy Laboratory Co,. Ltd.
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