Photosensor

Details Photosensor Photosensor

1986-08-21

1989-08-08

Edlow, Martin H.

357 30, H01L 4500

Patent

active

048557951

ABSTRACT:
A photosensor comprises an insulating substrate, an electrode, a photoconductor layer composed of a hydrogenated amorphous silicon semiconductor layer obtained by the glow discharge decomposition of monosilane gas, a junction stabilizing layer composed of a boron-containing hydrogenated amorphous silicon semiconductor which is obtained by the glow discharge decomposition of a mixed gas of monosilane and diborane, a transparent electrode and a transparent protective layer, these elements being laminated in that order. The insertion of the junction stabilizing layer between the photoconductor layer and the transparent electrode greatly improves the dark current characteristic. The electrode, the photoconductor layer and the junction stabilizing layer can be divided in correspondence with each picture element, thereby improving the resolution of the photosensor.

REFERENCES:
patent: 3864725 (1975-02-01), Merrin
patent: 3886587 (1975-05-01), Nicolay
patent: 4520380 (1985-05-01), Ovshinsky
patent: 4532373 (1985-07-01), Malsura et al.
patent: 4557987 (1985-12-01), Shirai et al.
patent: 4641168 (1987-02-01), Yamazaki et al.
patent: 4658280 (1987-04-01), Komatsu et al.
"Amorphous Silicon Solar Cell", Carlson et al. Applied Physics Letters vol. 28, No. 11, 1976, pp. 671-673.

Affiliated with

Also associated with

Rating

Photosensor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Photosensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photosensor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-909244