Liquid phase epitaxy method

Details Liquid phase epitaxy method Liquid phase epitaxy method

1987-01-28

1988-01-05

Ozaki, George T.

Fishing, trapping, and vermin destroying

437114, 437915, H01L 21368

Patent

active

047176881

ABSTRACT:
A liquid phase epitaxy method for the manufacture of silicon layers containing semiconductor structures involving the epitaxial deposition of silicon using a melt of a metal as the solvent, the metal forming silicon saturated solutions below 900.degree. C., and not producing any doping in the layers corresponding to a concentration greater than 10.sup.17 doping atoms/cm.sup.3. A gold melt is preferred because the melting point of the gold-silicon eutectic is about 370.degree. C. The invention provides for implementing the liquid phase epitaxy at very low temperatures and, thus, producing single crystal silicon layers on substrates provided with insulation layers, and required for the manufacture of three-dimensional integrated circuits in microelectronics.

REFERENCES:
patent: 4585493 (1986-04-01), Anthony
patent: 4654958 (1987-04-01), Baerg et al.
Kass et al., "Silicon Multilayers Grown by Liquid Phase Epitaxy", Essderc, 1985, 9 pages.
Kass et al., "Liquid Phase Epitaxy of Silicon: Potentialities and Prospects", Physica, vol. 129b, Amsterdam, Holland, (1985), pp. 161-165.
Hansen et al., "Constitution of Binary Alloys", (1958), McGraw-Hill, N.Y., pp. 51 and 232.

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