Single filament semiconductor laser

Oscillators – Molecular or particle resonant type

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357 18, H01S 319

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active

042153190

ABSTRACT:
A body of semiconductor material of a Group III-V compound or alloy of such compounds includes a substrate of one conductivity type with a pair of spaced, substantially parallel, dove-tail shaped grooves in a surface thereof. Over the surface of the substrate and the grooves are, in sequence, a first epitaxial layer of the one conductivity type, a second epitaxial layer which is the active recombination layer, a third epitaxial layer of the opposite conductivity type and a fourth epitaxial layer of the opposite conductivity type. The first and third layers are of a material forming heterojunctions with the second active layer. The second active layer has a region of uniform thickness directly over the space between the grooves. A stripe contact is provided on the fourth layer directly over the region of minimum thickness of the second active layer.

REFERENCES:
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patent: 3978428 (1976-08-01), Burnhan et al.
patent: 3983510 (1976-09-01), Hayashi et al.
patent: 4166253 (1979-08-01), Small et al.
D. Botez et al, "Constricted Double-Heterostructure (AlGa)As Diode Lasers", Appl. Phys. Lett., vol. 32, No. 4, Feb. 15, 1978, pp. 261-263.
D. R. Scifres et al, "Branching Waveguide Coupler in a GaAs/GaAlAs Injection Laser", Appl. Phys. Lett., vol. 32, No. 10, May 15, 1978, pp. 658 -661.

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