Method for providing buried layer delineation

Details Method for providing buried layer delineation Method for providing buried layer delineation

1986-06-26

1988-01-05

Ozaki, George T.

Fishing, trapping, and vermin destroying

437 26, 437985, H01L 21383, H01L 21425

Patent

active

047176873

ABSTRACT:
A simplified process is used to obtain pattern delineation for a buried layer by making use of the metastable state of silicon to grow oxide at different rates on the surface of the silicon. A silicon substrate having dopants implanted in a predetermined location is annealed at a low temperature. Oxide is then grown on the surface of the substrate at a temperature which maintains the silicon in a metastable state. The oxide will grow faster over the doped region than it will over the undoped region thereby providing a step which can be used for pattern delineation. After the oxide is grown the substrate is diffused in order to drive the impurity to the desired depth.

REFERENCES:
patent: 4149915 (1979-04-01), Bohg et al.
patent: 4151010 (1979-04-01), Goth
patent: 4381956 (1983-05-01), Lane
patent: 4389255 (1983-06-01), Chen et al.
patent: 4601098 (1986-07-01), Oda
patent: 4677739 (1987-07-01), Doering et al.

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