Process for making self-aligned contacts

Details Process for making self-aligned contacts Process for making self-aligned contacts

1988-08-22

1989-08-08

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437194, 437228, H01L 2188

Patent

active

048552526

ABSTRACT:
A process for making metal contacts and interconnection lines which are self-aligned to each other is disclosed. After semiconductor devices are formed and an insulating/planarizing layer is deposited, a layer of polyimide is deposited. A pattern of trenches into which the metal interconnection lines will be deposited is formed in the polyimide layer. Next, a pattern of contacts to the underlying semiconductor devices is formed in a photoresist layer. This pattern of contacts is subsequently etched into the insulating/planarizing layer. Since both the patterned photoresist layer and the patterned polyimide layer are used as etch masks, the contact windows through the insulating/planarizing layer and the trenches in the polyimide layer will be aligned with respect to each other. After metal deposition, the metal contacts and interconnection lines will be self-aligned.

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