Process for forming a contact structure

Details Process for forming a contact structure Process for forming a contact structure

1990-11-26

1992-10-27

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437228, 437978, 148DIG106, H01L 2144

Patent

active

051589109

ABSTRACT:
Self-aligned and/or isolated contacts are formed in a semiconductor device, while simultaneously providing device planarization. In one form, an imagable material is deposited directly on a substrate material. The imagable material is patterned to form a sacrifical plug on a portion of the substrate material. A substantially planar insulating layer is then deposited overlying the substrate material. The plug formed of the imagable material is then removed, thereby exposing a portion of the substrate material and defining a contact opening. A conductive layer is deposited and patterned to complete formation of a contact.

REFERENCES:
patent: 4868138 (1989-09-01), Chan et al.
patent: 4883767 (1989-11-01), Gray et al.
patent: 4997790 (1991-03-01), Woo et al.
patent: 5024971 (1991-06-01), Baker et al.
patent: 5037777 (1991-08-01), Mele et al.

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