Method for producing a field-effect type semiconductor device

Details Method for producing a field-effect type semiconductor device Method for producing a field-effect type semiconductor device

1990-10-31

1992-10-27

Quach, T. N.

Fishing, trapping, and vermin destroying

437 35, 437 44, 437193, 148DIG1, 357 233, H01L 21336

Patent

active

051589036

ABSTRACT:
A method for producing field-effect type semiconductor devices is disclosed which includes the steps of: forming a gate insulator film on a semiconductor substrate; forming a conductor film on the gate insulator film; and implanting impurity ions in the semiconductor substrate through the gate insulator film and the conductor film for the purpose of controlling a threshold voltage of the device, wherein the conductor film is employed as a gate electrode of the device. The method of this invention has the excellent advantages of readily controlling a threshold voltage of field-effect type semiconductor devices and of preventing the scatter of the threshold voltage values. An alternative embodiment employs formation of a second conductor film and implantation from an inclined direction.

REFERENCES:
patent: 4249968 (1981-02-01), Gardiner et al.
patent: 4744859 (1988-05-01), Hu et al.
patent: 4808555 (1989-02-01), Mauntel et al.
patent: 4906589 (1990-03-01), Chao

Affiliated with

Also associated with

Rating

Method for producing a field-effect type semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for producing a field-effect type semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing a field-effect type semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-905325