Method of manufacturing input circuit of semiconductor device

Details Method of manufacturing input circuit of semiconductor device Method of manufacturing input circuit of semiconductor device

1991-05-06

1992-10-27

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 51, 437 74, 357 2313, H01L 21331

Patent

active

051588994

ABSTRACT:
A method of manufacturing an input circuit of a semiconductor device comprises the steps of forming an N well on the main surface of a P type semiconductor substrate, forming a P well by injecting P type ions upwardly from the N well, and forming an N type region by injecting ions onto the main surface of the P well. An input voltage is applied to the N type region, and the input voltage is applied to the internal circuit formed on the main surface of the semiconductor substrate. A P-N junction is formed between the P well and an N type diffusion layer. When the P-N junction conducts due to the application of an excess voltage into the input voltage, current caused by the excess voltage is absorbed through the N type region formed on the main surface of the N well.

REFERENCES:
patent: 3212162 (1965-10-01), Moore
patent: 4692781 (1987-09-01), Rountree et al.
patent: 4795716 (1989-01-01), Yilmaz et al.
patent: 4983534 (1991-01-01), Kikuta
Mitsubishi Electric Corporation, "An Effect of Input Undershoot on Dynamic RAM's Performance", 1989, LSI Research and Development Laboratory.

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