Method for producing a metal semiconductor field effect transist

Details Method for producing a metal semiconductor field effect transist Method for producing a metal semiconductor field effect transist

1986-05-07

1988-01-05

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 26, 437912, 437143, 437 22, 357 15, 437 39, H01L 21265

Patent

active

047176857

ABSTRACT:
A method for producing a metal semiconductor field effect transistor includes the steps of forming a buffer layer of Al.sub.x Ga.sub.(1-x) As in a predetermined region of the semiconductor substrate using a mask pattern by selective Al ion implantation and annealing the semiconductor substrate including the layer. The resulting layer becomes a buffer layer of Al.sub.x Ga.sub.(1-x) As. In a MESFET having such a buffer layer operational characteristics are improved.

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patent: 4389768 (1983-06-01), Fowler et al.
MOCVD GaAlAs Hetero-Buffer GaAs Low Noise MESFETs-by Ohata, et al., Japanese Journal of Applied Physics, vol. 22 (1983).
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The Effect of Substrate Purity on Short-Channel Effects of GaAs MESFET's-Nakamura, et al.,-Extended Abstracts of the 16th '84 Int'l Conf. on Solid State Devices and Material.
Characteristics of Submicron Gate GaAs FET's with Al.sub.0.3 GA.sub.0.7 As Buffers: Effects of Interface Quality-by Kopp, et al., IEEE Electron Device Letters, vol. EDL-3, No. 2, Feb. 1982.
Below 10 ps/Gate Operation with Buried p-Layer Saint Fets by Yamasaki, et al.,-Electronics Letters, 6th Dec. 1984, vol. 20, No. 25/26.
King et al., "GaAs FETs with Si-Implanted Channel", in Electronics Letters, 31 Mar. 1977, vol. 13, No. 7, pp. 187-188.
Itoh et al., "Stability of Performance and Interfacial problems in GaAs MESFETs", in IEEE Trans. on Electron Devices, vol. ED-27, No. 6, Jun. 1980, pp. 1037-1044.
Tiwari S., "Improving Output Conductance of Short Channel GaAs Fets", in IBM Tech. Disc. Bull., vol. 27, No. 2, Jul. 1984, p. 1351.
Ferry, D. K., et al., "Gallium Arfenite Technology, TK 7871.15 G3 G35 1985, Howard W. Sams & Co., 1985.

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