Semiconductor optical devices with pn current blocking layers of

Details Semiconductor optical devices with pn current blocking layers of Semiconductor optical devices with pn current blocking layers of

1991-11-15

1993-05-25

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 45, 257 12, 257 13, 257 79, H01S 319

Patent

active

052146626

ABSTRACT:
A semiconductor optical device comprising a mesa shaped double heterostructure having an active layer on an InP substrate, and pn junction current blocking layers embedded at all sides of the said double heterostructure, wherein at least portion of said current blocking layers consists of a semiconductor layer lattice-matched to InP and having a band gap larger than that of the InP at a room temperature. Therefore, the current blocking characteristics of the current blocking layer is improved so that the increase of leakage current under operating condition of high temperature and high output power is well suppressed, and the nonlinearity in the optical output-current characteristic is drastically reduced even under such operating conditions.

REFERENCES:
patent: 4425650 (1984-01-01), Mito et al.
patent: 4692206 (1987-09-01), Kaneiwa et al.
patent: 4701927 (1987-10-01), Naka et al.

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