Metal treatment – Compositions – Heat treating
Patent
1974-05-01
1976-05-25
Rutledge, L. Dewayne
Metal treatment
Compositions
Heat treating
148187, 357 91, H01L 21265
Patent
active
039590259
ABSTRACT:
An improved insulated gate field effect transistor is achieved by using a material such as silicon nitride as an ion implantation and oxidation mask overlying a channel region, forming source and drain regions or extensions thereof by implanting ions of a conductivity modifier into a semiconductor substrate, and subjecting the implanted ions to a drive-in diffusion whereby the conductivity modifier ions are redistributed. The ion implantation allows greater control over the amount of conductivity modifier implanted in the lightly doped source and drain regions, the more uniform distribution of conductivity modifier increases the source-drain breakdown voltage, while the use of the silicon nitride mask provides simultaneously for general alignment of the channel region with the effective gate length.
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patent: 3638300 (1972-02-01), Foxhall et al.
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patent: 3789504 (1974-02-01), Jaddam
kroell et al. "Production of Complementary IGFETs," IBM Tech. Discl. Bull., Vol. 15, No. 5, Oct. 1972, pp. 1623, 1624.
Christoffersen H.
Davis J. M.
Magee Thomas H.
RCA Corporation
Rutledge L. Dewayne
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